A Little History Behind Photonic Band Gap Materials

Photonic band gap material: History behind photonic band gap material (PBG). In 1987 American physicist and engineer Eli Yablonovitch and Canadian physics professor Sajeev John of Toronto University in Canada made an artificial structure and then became the concept of PBG material. To evaluate this concept, they created a 3D prototype diamond lattice in Plexiglas, an acrylic glass material. Through this creation, they can prove that PBG materials can carry electromagnetic waves.

A photonic crystal is an artificially designed dielectric material that exhibits a frequency (wavelength) region where propagation of light is strictly prohibited. They are also known as photonic band gap (PBG) materials and were first forecasted and advanced by Sajeev John and Eli Yablonovitch in the late 1980's. The importance of the PBG structure is discussed by plotting the similarity between light and electrons. Because the electronic band gap is generated by the interaction between the electronic wave function and the periodic diffraction interaction. . Atomic lattice potential

Since the invention of lasers, the field of photonics has advanced by developing engineering materials for shaping optical flows. Photonic band gap (PBG) materials are a new class of periodic structures that facilitate photon manipulation of photons in much the same way a semiconductor manipulates electron currents. Propagation of photons in such a photonic crystal (PC) is diffracted a plurality of times from the crystal lattice, similarly to propagation of electrons in the semiconductor. The PBG in the PC acts as a photon to the bandgap of the electrons in the semiconductor and enables the operation of the optical flow. Therefore, this phenomenon enables optical phenomenon similar to that of the semiconductor device. As a result, the PBG device has the potential to complete the optical circuit that the semiconductor device made to the circuit. In contrast, photons form a bound state with atoms.

Source: Wenham, 2007 When daylight hit a semiconductor material photons with energy (Eph) below the bandgap energy (Eg) intrinsically interact with the semiconductor and pass through it as if it were transparent . However, photons with energies greater than the bandgap energy (Eph> Eg) interact with electrons in the covalent bond and use their energy to break the bonds and then produce electron-hole pairs , This can move independently. Furthermore, high energy photons (red light) are absorbed closer to the semiconductor surface than low energy photons (blue light).